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Part Number: MTP2955V

 

 

 

 

Description: This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supp...


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MTP2955V General Description


This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies).

MTP2955V Maximum Ratings

Symbol
Rating
Value
Unit
VDSS
 DrainSource Voltage
-60
V
VDGR
 GateSource Voltage
± 20
V
ID
 Drain Current
-Continuous
-Pulsed
-12
-42
A
PD
 Total Power Dissipation @ TC = 25°C
Derate above 25°C
60
0.40
W
W/°C
°C
TJ, Tstg
 Operating and Storage Temperature Range
60 to 175
°C

MTP2955V Features

`-12 A, -60 V. RDS(ON) = 0.230 @ VGS = -10 V
` Critical DC electrical parameters specified at elevated temperature.
` Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
` 175°C maximum junction temperature rating.

MTP2955V datasheet

MTP2955V
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