MTP2955V

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Package / Case : TO-220
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : - 60 V
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.23 Ohms


Features:

`-12 A, -60 V. R<sub>DS(ON)</sub> = 0.230 @ V<sub>GS</sub> = -10 V
` Critical DC electrical parameters specified at elevated temperature.
` Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
` 175°C maximum junction temperature rating.


Specifications

Symbol	Rating	Value	Unit
VDSS	DrainSource Voltage	-60	V
VDGR	GateSource Voltage	± 20	V
ID	Drain Current -Continuous -Pulsed	-12 -42	A
PD	Total Power Dissipation @ TC = 25°C Derate above 25°C	60 0.40	W W/°C °C
TJ, Tstg	Operating and Storage Temperature Range	60 to 175	°C

Description

The MTP2955V has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. The  MTP2955V feature faster switching and lower gate charge than other MOSFETs with comparable R_DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies).