Position: Home > Datasheet list > MTP Series > Index M > MTP2N60
Electronica China

Purchase MTP2N60, In-stock MTP2N60 From SeekIC.

MFG:MOT  Package Cooled:TO-220  D/C:04+  

MTP2N60 Product Image

MTP Series Datasheet download

Five Points

Part Number: MTP2N60

 

MFG: MOT

Package Cooled: TO-220

D/C: 04+

Description: This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capab...


Urgent Purchase

MTP2N60 General Description


This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP2N60 Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
600
Vdc
DraintoGate Voltage (RGS =1.0 M)
VDGR
600
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 50 ms)
VGS
VGSM
± 20
± 40
Vdc
VPK
Drain Current
- Continuous
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
2.0
9.0
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
50
0.4
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =50 Vdc, VGS =10Vdc, L =95mH, RG = 2.0,Peak IL =2.0 Adc
EAS
190
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
2.5°
62.5°
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP2N60 Features

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTP2N60 datasheet

MTP2N60
PDF/DataSheet Download

Find MTP2N60 Suppliers

  • ·MTP 3-Phase Rectifier Series
  •  
  • THREE PHASE BRIDGE Power Module 
  • 124897 KB
  • MTP 3-Phase Rectifier Series Datasheet Download
  • ·MTP10N06
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N06 Datasheet Download
  • ·MTP10N10
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N10 Datasheet Download
  • ·MTP10N10E
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM 
  • 243664 KB
  • MTP10N10E Datasheet Download
  • ·MTP10N10E/D
  •  
  • TMOS POWER FETs 10 AMPERES 100 VOLTS 
  • 208450 KB
  • MTP10N10E/D Datasheet Download
  • ·MTP10N10EL
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS 
  • 226684 KB
  • MTP10N10EL Datasheet Download
  • ·MTP10N10EL/D
  •  
  • TMOS POWER FET 10 AMPERES 100 VOLTS 
  • 226684 KB
  • MTP10N10EL/D Datasheet Download
  • ·MTP10N15
  • MOTOROLA [Motorola, Inc] 
  • POWER FIELD EFFECT TRANSISTOR 
  • 174376 KB
  • MTP10N15 Datasheet Download

Related Part Number

MTP2N60 Relative Products

  • MTP2N50E

    MTP2N50E

    The MTP2N50Euses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, the MTP2N50E is designed to withstand high energy in the avalanche and commutation modes. The new energy effi...

  • MTP2N40E

    MTP2N40E

    The MTP2N40Euses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced MTP2N40E is designed to withstand high energy in the avalanche and commutation modes. The new e...

  • MTP2N20

    MTP2N20

    The MTP2N20 is a kind of TMOS field effect transistor.The MTP2N20is N-channel enhancement-mode. The device is intended for medium voltage, high speed power switching applications such as regulators, converters, solenoid and relay drivers. There are some feat...

  • MTP2H-E6-C

    MTP2H-E6-C

    MULTIPLE TIE PLATE

  • MTP2H-E10-C

    MTP2H-E10-C

    MULTIPLE TIE PLATE

  • MTP29N15E

    MTP29N15E

    The MTP29N15Eis designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power suppli...

Hotspot Suppliers Product

Product List

  • Models: SKKT500/16E Price: 50-100 USD

    SKKT500/16E

    Price: 50-100 USD

    Thyristor, 1.5V, 0.27mΩ

  • Models: LMC7211BIMX Price: 0.4-0.8 USD

    LMC7211BIMX

    Price: 0.4-0.8 USD

    micropower CMOS comparator, SOP8, 16V, 40 mA, Low input current

  • Models: LUWW5PM Price: 1.5-2 USD

    LUWW5PM

    Price: 1.5-2 USD

    golden dragon oval plus, SMD, 1 A

  • Models: AT24C32AN-10SU2.7 Price: 0.11-0.15 USD

    AT24C32AN-10SU2.7

    Price: 0.11-0.15 USD

    2-Wire Serial EEPROM, 32K (4096 x 8), 1.8V to 5.5V

  • Models: FQPF13N06L Price: 0.23-0.26 USD

    FQPF13N06L

    Price: 0.23-0.26 USD

    60V LOGIC N-Channel MOSFET, TO-220F, Improved dv/dt capability, 17pF

  • Models: ER1004 Price: 0.2-0.3 USD

    ER1004

    Price: 0.2-0.3 USD

    superfast recovery rectifier, TO-220AC, Low power loss, high efficiency, 10A, High surge capacity

  • Models: N010-0550-T711 Price: 80-100 USD

    N010-0550-T711

    Price: 80-100 USD

    N010-0550-T711 - Resistive Touch Panel Specification - Fujitsu Component Limited

  • Models: 1N5711 Price: 0.03-1 USD

    1N5711

    Price: 0.03-1 USD

    DIODE SCHOTTKY SINGLE 70V AXIAL - 1N5711

  • Models: PIC18F4550-I/P Price: 3.3-4 USD

    PIC18F4550-I/P

    Price: 3.3-4 USD

    High-Performance, Enhanced Flash USB Microcontroller, DIP40, Low-speed, 1.5 Mb/s

  • Models: ADSP-21060LKS-160X Price: 160-180 USD

    ADSP-21060LKS-160X

    Price: 160-180 USD

    ADSP-21060LKS-160 Analog Devices ADSP-2106x SHARC DSP Microcomputer Family

  • Models: TPSD336K035R0300 Price: 0.6-0.8 USD

    TPSD336K035R0300

    Price: 0.6-0.8 USD

    CAP TANT LOESR 33UF 35V 10% SMD - TPSD336K035R0300

  • Models: NFC20-8863 Price: 20-40 USD

    NFC20-8863

    Price: 20-40 USD

    20 Watts output power, MODULE, 2:1 input voltage range, Remote ON/OFF control, Overvoltage protect...

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All