Position: Home > Datasheet list > MTP Series > Index M > MTP2P50
Electronica China

Purchase MTP2P50, In-stock MTP2P50 From SeekIC.

MFG:ON  Package Cooled:TO-220  D/C:05+  

MTP2P50 Product Image

MTP Series Datasheet download

Five Points

Part Number: MTP2P50

 

MFG: ON

Package Cooled: TO-220

D/C: 05+

Description: This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capab...


Urgent Purchase

MTP2P50 General Description


This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP2P50 Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
500
Vdc
DraintoGate Voltage (RGS =1.0 M)
VDGR
500
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
VPK
Drain Current
- Continuous
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
2.0
1.6
6.0
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
75
0.6
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =100 Vdc, VGS =10Vdc, PEAK IL =4.0 Apk, L =10H, RG = 25)
EAS
80
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
1.67
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP2P50 Features

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTP2P50 datasheet

MTP2P50
PDF/DataSheet Download

Find MTP2P50 Suppliers

  • ·MTP 3-Phase Rectifier Series
  •  
  • THREE PHASE BRIDGE Power Module 
  • 124897 KB
  • MTP 3-Phase Rectifier Series Datasheet Download
  • ·MTP10N06
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N06 Datasheet Download
  • ·MTP10N10
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N10 Datasheet Download
  • ·MTP10N10E
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM 
  • 243664 KB
  • MTP10N10E Datasheet Download
  • ·MTP10N10E/D
  •  
  • TMOS POWER FETs 10 AMPERES 100 VOLTS 
  • 208450 KB
  • MTP10N10E/D Datasheet Download
  • ·MTP10N10EL
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS 
  • 226684 KB
  • MTP10N10EL Datasheet Download
  • ·MTP10N10EL/D
  •  
  • TMOS POWER FET 10 AMPERES 100 VOLTS 
  • 226684 KB
  • MTP10N10EL/D Datasheet Download
  • ·MTP10N15
  • MOTOROLA [Motorola, Inc] 
  • POWER FIELD EFFECT TRANSISTOR 
  • 174376 KB
  • MTP10N15 Datasheet Download

Related Part Number

MTP2P50 Relative Products

  • MTP2N60E

    MTP2N60E

    The MTP2N60Euses an advanced termination scheme to provideenhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new e...

  • MTP2N60

    MTP2N60

    The MTP2N60uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTP2N...

  • MTP2N50E

    MTP2N50E

    The MTP2N50Euses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, the MTP2N50E is designed to withstand high energy in the avalanche and commutation modes. The new energy effi...

  • MTP2N40E

    MTP2N40E

    The MTP2N40Euses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced MTP2N40E is designed to withstand high energy in the avalanche and commutation modes. The new e...

  • MTP2N20

    MTP2N20

    The MTP2N20 is a kind of TMOS field effect transistor.The MTP2N20is N-channel enhancement-mode. The device is intended for medium voltage, high speed power switching applications such as regulators, converters, solenoid and relay drivers. There are some feat...

  • MTP2H-E6-C

    MTP2H-E6-C

    MULTIPLE TIE PLATE

Hotspot Suppliers Product

Product List

  • Models: MMBTA06LT1G Price: 0.012-0.07 USD

    MMBTA06LT1G

    Price: 0.012-0.07 USD

    80V, 500mA, Driver Transistor

  • Models: 2SK583 Price: 0.001-0.01 USD

    2SK583

    Price: 0.001-0.01 USD

    N-Channel, Enhancement Silicon MOSFET, TO-92, 50 V, 200 mA, Sanyo Semicon Device

  • Models: RF071M2S Price: 1-100 USD

    RF071M2S

    Price: 1-100 USD

    Fast recovery diode, 200V, 1.0A, Small power mold type, Ultra low VF, Low switching loss, Very fas...

  • Models: D3794CY Price: 1-5 USD

    D3794CY

    Price: 1-5 USD

    color CCD linear image sensor, 3 rows of 2700 pixels, 300 dpi/A4 color image scanners

  • Models: ADS7843E Price: 0.1-10 USD

    ADS7843E

    Price: 0.1-10 USD

    12-bit, analog-to-digital converter, 16-QSOP, –0.3V to +6V, 250mW, 125kHz

  • Models: QM300HA-H Price: 1-2 USD

    QM300HA-H

    Price: 1-2 USD

    Mitsubishi QM300HA-H

  • Models: HCGHA1J222I Price: 2-3 USD

    HCGHA1J222I

    Price: 2-3 USD

    screw terminal type, aluminum electrolytic capacitor, DIP, 25 to 400V.DC

  • Models: LTV-817-A Price: 0.05-0.08 USD

    LTV-817-A

    Price: 0.05-0.08 USD

    High Density Mounting Type, 1-CH Photocoupler, DIP4, 1.2 V, 8 mA

  • Models: TL507CP Price: 0.2-2 USD

    TL507CP

    Price: 0.2-2 USD

    analog-to-digital converter, DIP, Low Cost, 7-Bit Resolution, 25 mW, Ratiometric Conversion

  • Models: BCP69-16 Price: 0.0452-0.057 USD

    BCP69-16

    Price: 0.0452-0.057 USD

    PNP Silicon AF Transistor, 20V, 1A, SOT223, Surface Mount, 3W, RoHS Compliant

  • Models: ECE-T1JP123EA Price: 1-1.5 USD

    ECE-T1JP123EA

    Price: 1-1.5 USD

    aluminum electrolytic capacitor, DIP, 16 to 250VDC, 1200 to 180000μF, Can vent construction

  • Models: SL75J Price: 10-15 USD

    SL75J

    Price: 10-15 USD

    Mobile Intel® Celeron® Processor 2.40 GHz, 256K Cache, 400 MHz

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All