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Part Number: MTP3N120E

 

 

 

 

Description: This advanced highvoltage TMOS EFET is designed to withstand high energy in the avalanche mode and swi...


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MTP3N120E General Description


This advanced highvoltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls, and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

MTP3N120E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
1200
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
1200
Vdc
GatetoSource Voltage
- Continuous
- Nonrepetitive (tp 50 ms)
VGS
VGSM
± 20
±40
Vdc
Vpk
Drain Current - Continuous @ 25°C
- Continuous @ 100°C
- Single Pulsed (tp 10 s)
ID
ID
IDM
3.0
2.2
11
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
125
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C

MTP3N120E Features

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
* See App. Note AN1327 - Very Wide Input Voltage Range; Offline Flyback Switching Power Supply

MTP3N120E datasheet

MTP3N120E
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