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MFG:MOTOROLA  Package Cooled:02+  D/C:220  

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Part Number: MTP3N50

 

MFG: MOTOROLA

Package Cooled: 02+

D/C: 220

Description: This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and sw...


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MTP3N50 General Description


This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

MTP3N50 Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
500
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
500
Vdc
GatetoSource Voltage
- Continuous
- Nonrepetitive (tp 50 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
- Continuous
- Pulsed
ID
IDM
3.0
10
Adc

Total Power Dissipation TC = 25°C
Derate above 25°C
PD
50
0.4
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
60 to 150
°C

MTP3N50 Features

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode

MTP3N50 datasheet

MTP3N50
PDF/DataSheet Download

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