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Part Number: MTU20N40E

 

 

 

 

Description: This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capab...


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MTU20N40E General Description


This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTU20N40E Maximum Ratings

Rating Symbol Value Unit
DraintoSource Voltage VDSS 400 Vdc
DraintoGate Voltage (RGS = 1.0 MW) VDGR 400 Vdc
GatetoSource Voltage - Continuous
 VGS
VGSM
 ± 20
± 30		 Vdc
Vpk
Drain Current - Continuous
Drain Current - Continuous @ 100°C
Drain Current - Single Pulse (tp 3 10 ms)
ID
ID
IDM		 20
15
70		 Adc
Apk
Total Power Dissipation
Derate above 25°C
PD		 223
1.7		 Watts
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25 )		 EAS 600 mJ
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient		 RqJC
RqJA		 0.56
62.5		 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds TL 260 °C
Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C

MTU20N40E Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a
  Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTU20N40E datasheet

MTU20N40E/D
PDF/DataSheet Download

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