Package Cooled:03+/04+ D/C:TO-3P
Package Cooled: 03+/04+
D/C: TO-3P
Description: The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surfac...
The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drainto source diode with a fast recovery time. Designed for high voltage, high speed switching applications in surface mount PWM motor controls and both acdc and dcdc power supplies. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
1000 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
1000 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS |
+20 +40 |
Vdc |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
6.0 4.2 18 |
Adc Apk |
| Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C (1) |
PD |
178 1.43 2.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =6.0Apk, L = 27.77mH, RG = 25) |
EAS |
720 |
mJ |
| Thermal Resistance - Junction to Cas - Junction to Case - Junction to Ambient(1) |
RJC RJA RJA |
0.70 62.5 35 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
MTV6N100E
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