MTW32N20EG

MOSFET NFET T0247 200V 32A 75mOhm

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SeekIC No. : 00159622 Detail

MTW32N20EG: MOSFET NFET T0247 200V 32A 75mOhm

floor Price/Ceiling Price

Part Number:
MTW32N20EG
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 75 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-247
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 75 mOhms


Parameters:

Technical/Catalog InformationMTW32N20EG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C32A
Rds On (Max) @ Id, Vgs75 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 5000pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs120nC @ 10V
Package / CaseTO-247-3 (TO-247AC, Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MTW32N20EG
MTW32N20EG
MTW32N20EGOS ND
MTW32N20EGOSND
MTW32N20EGOS



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