MOSFET NFET T0247 200V 32A 75mOhm
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Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable t...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 32 A | ||
| Resistance Drain-Source RDS (on) : | 75 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-247 | Packaging : | Tube |
| Technical/Catalog Information | MTW32N20EG |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 32A |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 16A, 10V |
| Input Capacitance (Ciss) @ Vds | 5000pF @ 25V |
| Power - Max | 180W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V |
| Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MTW32N20EG MTW32N20EG MTW32N20EGOS ND MTW32N20EGOSND MTW32N20EGOS |