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MFG:MOTOROLA  Package Cooled:00+  D/C:3P  

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Part Number: MTW8N60E

 

MFG: MOTOROLA

Package Cooled: 00+

D/C: 3P

Description: This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capab...


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MTW8N60E General Description


This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTW8N60E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
600
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
600
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
8.0
6.4
24
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
180
1.43
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =24 Apk, L =3.0 mH, RG = 25)
EAS
864
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
0.70
40
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTW8N60E Features

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware

MTW8N60E datasheet

MTW8N60E
PDF/DataSheet Download

Find MTW8N60E Suppliers

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