MUN5111DW1T1

Transistors Switching (Resistor Biased) 100mA 50V BRT Dual

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SeekIC No. : 00224787 Detail

MUN5111DW1T1: Transistors Switching (Resistor Biased) 100mA 50V BRT Dual

floor Price/Ceiling Price

Part Number:
MUN5111DW1T1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2020/4/4

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : PNP
Typical Input Resistor : 10 KOhms Typical Resistor Ratio : 1
Mounting Style : SMD/SMT Package / Case : SC-88-6
Collector- Emitter Voltage VCEO Max : 50 V Continuous Collector Current : - 0.1 A
Peak DC Collector Current : 100 mA Power Dissipation : 250 mW
Maximum Operating Temperature : + 150 C Packaging : Reel    

Description

Maximum Operating Frequency :
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 50 V
Typical Input Resistor : 10 KOhms
Transistor Polarity : PNP
Configuration : Dual
Peak DC Collector Current : 100 mA
Typical Resistor Ratio : 1
Package / Case : SC-88-6
Continuous Collector Current : - 0.1 A
Power Dissipation : 250 mW


Features:

·Simplifies Circuit Design
·Reduces Board Space
·Reduces Component Count
·Available in 8 mm, 7 inch/3000 Unit Tape and Reel



Specifications

Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc



Description

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT363 package which is ideal for lowpower surface mount applications where board space is at a premium.


Parameters:

Technical/Catalog InformationMUN5111DW1T1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type2 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max385mW
Resistor - Base (R1) (Ohms)10K
Resistor - Emitter Base (R2) (Ohms)10K
Vce Saturation (Max) @ Ib, Ic250mV @ 300A, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Frequency - Transition-
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MUN5111DW1T1
MUN5111DW1T1



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