MWE6IC9100NR1

The MWE6IC9100NR1 is RF LDMOS wideband integrated power amplifier. It is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.

The features of MWE6IC9100NR1 can be summarized as:(1)Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters; (2)On-Chip Matching (50 Ohm Input, DC Blocked); (3)Integrated Quiescent Current Temperature Compensation with Enable/Disable Function ; (4)Integrated ESD Protection; (5)225°C Capable Plastic Package; (6)RoHS Compliant; (7)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

The absolute maximum ratings of MWE6IC9100NR1 are:(1)Drain-Source Voltage:-0.5V to +66 Vdc; (2)Gate-Source Voltage:-0.5V to +6 Vdc; (3)Storage Temperature Range:-65°C to +150 °C; (4)Case Operating Temperature:150 °C; (5)Operating Junction Temperature:225 °C.

If you want to know more information such as the electrical characteristics about the MWE6IC9100NR1, please download the datasheet in www.seekic.com or www.chinaicmart.com .