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Part Number: MWS5114
Description: The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon ga...


Description: The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon ga...
The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output and utilizes a single power supply of 4.5V to 6.5V.
The MWS5114 is supplied in 18 lead, hermetic, dual-in-line sidebrazed ceramic packages (D suffix) and in 18 lead dualin- line plastic packages (E suffix).
MWS5114
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