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Part Number: MX1011B700Y

 

 

 

 

Description: NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with...


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MX1011B700Y General Description


NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.

MX1011B700Y Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 65 V
VCEO collector-emitter voltage open base - 15 V
VCES collector-emitter voltage RBE = 0 - 65 V
VEBO emitter-base voltage open collector - 3 V
ICM collector current tp 10 s; 1% - 40 A
Ptot total power dissipation Tmb = 75 ;tp 10 s; 1% - 1365 W
Tstg storage temperature -65 +200
Tj junction temperature - 200
Tsld soldering temperature t 10 s; note 1 - 235

MX1011B700Y Features

· Suitable for short and medium pulse applications up to 100 ms/10%
· Internal input and output prematching networks allow an easier design of circuits
· Diffused emitter ballasting resistors improve ruggedness
· Interdigitated emitter-base structure provides high emitter efficiency
· Gold metallization with barrier realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry improves power sharing and reduces thermal resistance.

MX1011B700Y Typical Application

Intended for use in common base, class C, broadband, pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within the 1030 to 1150 MHz band.

MX1011B700Y datasheet

MX1011B700Y
PDF/DataSheet Download

  • Datasheet: MX1011B700Y
  • File Size: 93739 KB
  • Manufacturer: PHILIPS [Philips Semiconductors]
  • Click here to Download

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