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MX1011B700Y

Features: · Suitable for short and medium pulse applications up to 100 ms/10%· Internal input and output prematching networks allow an easier design of circuits· Diffused emitter ballasting resistors improve ruggedness· Interdigitated emitter-base structure provides high emitter efficiency· Gold m...

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SeekIC No. : 004431510 Detail

MX1011B700Y: Features: · Suitable for short and medium pulse applications up to 100 ms/10%· Internal input and output prematching networks allow an easier design of circuits· Diffused emitter ballasting resistor...

MX1011B700Y Data Sheet

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Part Number:
MX1011B700Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

· Suitable for short and medium pulse applications up to 100 ms/10%
· Internal input and output prematching networks allow an easier design of circuits
· Diffused emitter ballasting resistors improve ruggedness
· Interdigitated emitter-base structure provides high emitter efficiency
· Gold metallization with barrier realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry improves power sharing and reduces thermal resistance.


Application

Intended for use in common base, class C, broadband, pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within the 1030 to 1150 MHz band.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 65 V
VCEO collector-emitter voltage open base - 15 V
VCES collector-emitter voltage RBE = 0 - 65 V
VEBO emitter-base voltage open collector - 3 V
ICM collector current tp 10 s; 1% - 40 A
Ptot total power dissipation Tmb = 75 ;tp 10 s; 1% - 1365 W
Tstg storage temperature -65 +200
Tj junction temperature - 200
Tsld soldering temperature t 10 s; note 1 - 235



Description

NPN silicon planar epitaxial microwave power transistor MX1011B700Y in a SOT439A metal ceramic flange package with base connected to flange.




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