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N01L163WC2A

Features: • Single Wide Power Supply Range 2.3 to 3.6 Volts• Very low standby current 2.0A at 3.0V (Typical)• Very low operating current 2.0mA at 3.0V and 1s (Typical)• Very low Page Mode operating current 0.8mA at 3.0V and 1s (Typical) • Simple memory control Dual Ch...

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SeekIC No. : 004432514 Detail

N01L163WC2A: Features: • Single Wide Power Supply Range 2.3 to 3.6 Volts• Very low standby current 2.0A at 3.0V (Typical)• Very low operating current 2.0mA at 3.0V and 1s (Typical)• Very ...

N01L163WC2A Data Sheet

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Part Number:
N01L163WC2A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single Wide Power Supply Range 2.3 to 3.6 Volts
• Very low standby current 2.0A at 3.0V (Typical)
• Very low operating current 2.0mA at 3.0V and 1s (Typical)
• Very low Page Mode operating current 0.8mA at 3.0V and 1s (Typical)
• Simple memory control Dual Chip Enables (CE1and CE2) Byte control for independent byte operation Output Enable (OE ) for memory expansion
• Low voltage data retention Vcc = 1.8V
• Very fast output enable access time 30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package available


Pinout

Connection Diagram


Specifications

Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
0.3 to 4.5
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
40 to 125
Operating Temperature
TA
-40 to +85
Soldering Temperature and Time
TSOLDER
260 , 10sec



Description

The N01L163WC2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology to provide both high-speed performance and ultra-low power. The N01L163WC2A device operates with two chip enable ( CE1and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device.

The N01L163WC2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40   to +85  and is available in JEDEC standard packages compatible with other standard 64Kb x 16 SRAMs

 




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