N08T1630CxB

DescriptionThe N08T1630CxB is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. N08T1630CxB is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low standby ...

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SeekIC No. : 004432529 Detail

N08T1630CxB: DescriptionThe N08T1630CxB is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. N08T1630CxB is designed to b...

floor Price/Ceiling Price

Part Number:
N08T1630CxB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Description

The N08T1630CxB is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. N08T1630CxB is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode.The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.

The N08T1630CxB has the following features including:(1)single wide power supply range; (2)very low standby current; (3)very low operating current; (4)simple memory control; (5)very fast access time; (6)very fast output enable access time; (7)automatic power down to standby mode; (8)TTL compatible three-state output driver; (9)green package option for TSOP and BGA.The N08T1630CxB is optimal for various applications where low-power is critical such as battery backup and hand-held devices.

The absolute maximum ratings of the N08T1630CxB are:(1)voltage on any pin relative to Vss:-0.3 to Vcc+0.3V; (2)voltage on VCC supply relative to Vss:-0.3 to 4.5V; (3)operating temperature:-40 to 85; (4)storage temperature:-40 to 125;(5)power dissipation:500mW.Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.




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