N32T1630C1E

1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Operating Characteristics (Over Specified Temperature Range)

1. Typical values are measured at Vcc=Vcc Typ., T_A=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system.

     The N32T1630C1E is an integrated memory device containing a 32 Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2,097,152 words by 16 bits. N32T1630C1E is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. Also included are several other power saving modes: a deep sleep mode where data is not retained in the array and partial array refresh mode where data is retained in a portion of the array. Both these modes reduce standby current drain. The N32T1630C1E can operate over a very wide temperature range of -25^oC to +85^oC.