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NAND01GW3A2B-KGD

Features: High density NAND Flash memory 1 Gbit memory array 32 Mbit spare area Cost effective solutions for mass storage applications NAND interface x8 or x16 bus width Multiplexed Address/ Data Pinout compatibility for all densities Supply voltage: 3.0V device: VDD = 2.7 to 3.6V PAGE siz...

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SeekIC No. : 004432667 Detail

NAND01GW3A2B-KGD: Features: High density NAND Flash memory 1 Gbit memory array 32 Mbit spare area Cost effective solutions for mass storage applications NAND interface x8 or x16 bus width Multiplexed Address/ D...

NAND01GW3A2B-KGD Data Sheet

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Part Number:
NAND01GW3A2B-KGD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/14

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Product Details

Description



Features:

High density NAND Flash memory
  1 Gbit memory array
  32 Mbit spare area
  Cost effective solutions for mass storage applications
NAND interface
  x8 or x16 bus width
  Multiplexed Address/ Data
  Pinout compatibility for all densities
Supply voltage:
  3.0V device: VDD = 2.7 to 3.6V
PAGE size
  x8 device: (512 + 16 spare) Bytes
  x16 device: (256 + 8 spare) Words
Block size
  x8 device: (16K + 512 spare) Bytes
  x16 device: (8K + 256 spare) Words
Page Read / Program
  Random access: 15s (3V) (max)
  Sequential access: 50ns (min)
  Page program time: 200s (typ)
Copy Back Program mode
  Fast page copy without external buffering
Fast Block Erase
  Block erase time: 2ms (Typ)
Status Register
Electronic Signature
Chip Enable 'Don't Care'
  Simple interface with microcontroller
Serial Number option
Hardware Data Protection
  Program/Erase locked during Power transitions
Data Integrity
  100,000 Program/Erase cycles
  10 years Data Retention


Specifications

Symbol Parameter Value Unit
Min Max
TBIAS Temperature Under Bias 50 125 °C
TSTG Storage Temperature 65 150 °C
VIO (1) Input or Output Voltage 0.6 4.6 V
VDD Supply Voltage 0.6 4.6 V
1. Minimum Voltage may undershoot to 2V for less than 20ns during transitions on input and I/O pins.
    Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.


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