Position: Home > Datasheet list > NAN Series > Index N > NAND08GW3B2A
Electronica China

Purchase NAND08GW3B2A, In-stock NAND08GW3B2A From SeekIC.

MFG:ST  Package Cooled:SLC  D/C:07+  

NAND08GW3B2A Product Image

NAN Series Datasheet download

Five Points

Part Number: NAND08GW3B2A

 

MFG: ST

Package Cooled: SLC

D/C: 07+

Description: The NAND Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories that uses NAND cel...


Urgent Purchase

NAND08GW3B2A General Description


The NAND Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories that uses NAND cell technology. The NAND04GW3B2B and NAND08GW3B2A have a density of 4 Gbits and 8 Gbits, respectively. They operate from a 3V voltage supply. The size of a Page is 2112 Bytes (2048 + 64 spare).

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 Input/Output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.

Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction Code (ECC).

The device has hardware and software security features:

A Write Protect pin is available to give a hardware protection against program and erase operations.
A Block Locking scheme is available to provide user code and/or data protection.

The device features an open-drain Ready/Busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor.

A Copy Back Program command is available to optimize the management of defective blocks. When a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed.

The NAND04GW3B2B and NAND08GW3B2A have Cache Program and Cache Read features which improve the program and read throughputs for large files. During Cache Programming, the device loads the data in a Cache Register while the previous data is transferred to the Page Buffer and programmed into the memory array. During Cache Reading, the device loads the data in a Cache Register while the previous data is transferred to the I/O Buffers to be read.

The device has the Chip Enable Don't Care feature, which allows code to be directly downloaded by a microcontroller, as Chip Enable transitions during the latency time do not stop the read operation.

The devices have the option of a Unique Identifier (serial number), which allows each device to be uniquely identified.

The Unique Identifier options is subject to an NDA (Non Disclosure Agreement) and so not described in the datasheet. For more details of this option contact your nearest ST Sales office.

The device is available in a TSOP48 (12 x 20mm) package. In order to meet environmental requirements, ST offers the NAND04GW3B2B and NAND08GW3B2A in ECOPACK® package. ECOPACK packages are Lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.

NAND08GW3B2A Maximum Ratings

Symbol Parameter Value Unit
Min Max
TBIAS Temperature Under Bias -50 125 °C
TSTG Storage Temperature -65 150 °C
VIO(1) Input or Output Voltage 0.6 4.6 V
VDD Supply Voltage 0.6 4.6 V

NAND08GW3B2A Features

High density NAND Flash Memory
up to 8 Gbit memory array
Up to 256 Mbit spare area
Cost effective solution for mass storage applications
NAND Interface
x8 bus width
Multiplexed Address/ Data
Supply voltage
3.0V device: VDD = 2.7 to 3.6V
Page size
(2048 + 64 spare) Bytes
Block size
(128K + 4K spare) Bytes
Page Read/Program
Random access: 25s (max)
Sequential access: 30ns (min)
Page program time: 200s (typ)
Copy Back Program mode
Fast page copy without external buffering
Cache Program and Cache Read modes
Internal Cache Register to improve the program and read throughputs
Fast Block Erase
Block erase time: 2ms (typ)
Status Register
Electronic Signature
Chip Enable 'don't care'
for simple interface with microcontroller
Serial Number option
Data protection
Hardware and Software Block Locking
Hardware Program/Erase locked during Power transitions
Data integrity
100,000 Program/Erase cycles
10 years Data Retention
ECOPACK® package
Development tools
Error Correction Code software and
hardware models
Bad Blocks Management and Wear Leveling algorithms
File System OS Native reference software
Hardware simulation models

NAND08GW3B2A Connection Diagram

NAND08GW3B2A  Connection Diagram

NAND08GW3B2A datasheet

NAND08GW3B2A
PDF/DataSheet Download

  • Datasheet: NAND08GW3B2A
  • File Size: 513687 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

Find NAND08GW3B2A Suppliers

  • ·NAND01G-A
  • STMICROELECTRONICS [STMicroelectronics] 
  • 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 
  • 938589 KB
  • NAND01G-A Datasheet Download
  • ·NAND01GR3A
  • STMICROELECTRONICS [STMicroelectronics] 
  • 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 
  • 864267 KB
  • NAND01GR3A Datasheet Download
  • ·NAND01GR3A0AN1
  • STMICROELECTRONICS [STMicroelectronics] 
  • 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 
  • 938589 KB
  • NAND01GR3A0AN1 Datasheet Download
  • ·NAND01GR3A0AN1E
  • STMICROELECTRONICS [STMicroelectronics] 
  • 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 
  • 933992 KB
  • NAND01GR3A0AN1E Datasheet Download
  • ·NAND01GR3A0AN1F
  • STMICROELECTRONICS [STMicroelectronics] 
  • 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 
  • 933992 KB
  • NAND01GR3A0AN1F Datasheet Download
  • ·NAND01GR3A0AN1T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 
  • 933992 KB
  • NAND01GR3A0AN1T Datasheet Download
  • ·NAND01GR3A0AN6
  • STMICROELECTRONICS [STMicroelectronics] 
  • 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 
  • 938589 KB
  • NAND01GR3A0AN6 Datasheet Download
  • ·NAND01GR3A0AN6E
  • STMICROELECTRONICS [STMicroelectronics] 
  • 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 
  • 933992 KB
  • NAND01GR3A0AN6E Datasheet Download

NAND08GW3B2A Relative Products

  • NAND08G-BxC

    NAND08G-BxC

    The NAND04G-B2D and NAND08G-BxC are part of the NAND Flash 2112 byte/1056 wordpage family of non-volatile Flash memories. They use NAND cell technology have a densityof 4 Gbits and 8 Gbits, respectively. The NAND04G-B2D memory array is split into 2 planes of...

  • NAND08G-B

    NAND08G-B

    The NAND Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories that uses NAND cell technology. The NAND08G-Bdevices range from 1 Gbit to 8 Gbits and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 2112 Bytes...

  • NAND08GAH0JZC5E

    NAND08GAH0JZC5E

    IC FLASH EMMC 1GB 3.3V 153-LFBGA

  • NAND08GAH0FZC5E

    NAND08GAH0FZC5E

    IC FLASH EMMC 1GB SLC LFBGA153

  • NAND08GAH0BZA5E

    NAND08GAH0BZA5E

    IC FLASH EMMC 1GB MLC LFBGA169

  • NAND04GW3C2BN6E

    NAND04GW3C2BN6E

    IC FLASH NAND 4GB 3V LP TSOP48

Hotspot Suppliers Product

  • Models: EP1C4F400C7
Price: 0.1-1 USD

    EP1C4F400C7

    Price: 0.1-1 USD

    field programmable gate array, BGA, –25 to 25 mA, –0.5 to 2.4 V, High-speed

  • Models: HFA08TB60
Price: 0.26-0.35 USD

    HFA08TB60

    Price: 0.26-0.35 USD

    art ultra fast recovery diode, TO220, 600 V, 60A, 14W, Ultrafast Recovery, Very Low IRRM

  • Models: SN755867
Price: 0.1-20 USD

    SN755867

    Price: 0.1-20 USD

    Vacuum Fluorescent Display Driver, SN755867, QFP

  • Models: XC5VLX30T-1FFG665
Price: 150-300 USD

    XC5VLX30T-1FFG665

    Price: 150-300 USD

    IC FPGA, VIRTEX-5, 30K, 665FCBGA, Cross-platform compatibility, Xilinx, Inc

  • Models: TMS320F2810PBKA
Price: 19.5-24.5 USD

    TMS320F2810PBKA

    Price: 19.5-24.5 USD

    high-performance digital signal processor, LQFP128, 150 MHz, 1.8-V, ±20 mA

  • Models: EKMM181VSN182MA40S
Price: 0.01-100 USD

    EKMM181VSN182MA40S

    Price: 0.01-100 USD

    aluminum electrolytic capacitor, 160 to 400V, 1800 uF, EKMM181VSN182MA40S

  • Models: SKM400GB12V
Price: 105-130 USD

    SKM400GB12V

    Price: 105-130 USD

    1200V, 467A, IGBT MODULES, Low switching losses, integrated gate resistor, UL recognized

  • Models: MAX825LEUK
Price: 1.07-1.23 USD

    MAX825LEUK

    Price: 1.07-1.23 USD

    5-Pin Microprocessor, Supervisory Circuit, SOT23-5, 10μA Operating Current, 140ms Power On Reset

  • Models: TLP280-4
Price: 0.6-1.5 USD

    TLP280-4

    Price: 0.6-1.5 USD

    thin coupler, ±50 mA, 7 V, 2500 Vrms Isolation voltage, UL recognized, SOP16

  • Models: NG-119723-001
Price: 32.55-39.68 USD

    NG-119723-001

    Price: 32.55-39.68 USD

    NG-119723-001,DC-DC CONVERTER

  • Models: EPM7128SQC100-10N
Price: 30-35 USD

    EPM7128SQC100-10N

    Price: 30-35 USD

    high-density, high-performance PLD, 100-PQFP, 5.0V, 128, –25 to 25mA

  • Models: 86CS43FG-6NH4
Price: 1.2-3 USD

    86CS43FG-6NH4

    Price: 1.2-3 USD

    86CS43FG-6NH4, Integrated Circuits, Toshiba

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All