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Part Number: NAND128-A

 

 

 

 

Description: The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single...


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NAND128-A General Description


The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology.It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data In-put/Output signals on a multiplexed x8 or x16 In-put/Output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.

Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction Code (ECC). A Write Protect pin is available to give a hardware protection against program and erase operations.

The devices feature an open-drain Ready/Busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active.The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor.

A Copy Back command is available to optimize the management of defective blocks. When a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed

NAND128-A Maximum Ratings

Symbol

Parameter
Value
Unit
Min
Max
TBIAS
Temperature Under Bias
50
125
°C
TSTG
Storage Temperature
65
150
°C
VIO (1)
Input or Output Voltage 1.8V devices
0.6
2.7
V
3 V devices
0.6
4.6
V
VDD
Supply Voltage 1.8 V devices
0.6
2.7
V
3 V devices
0.6
4.6
V

 

Note: 1. Minimum Voltage may undershoot to 2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.

NAND128-A Features

HIGH DENSITY NAND FLASH MEMORIES
    Up to 1 Gbit memory array
    Up to 32 Mbit spare area
    Cost effective solutions for mass storage applications
NAND INTERFACE
    x8 or x16 bus width
    Multiplexed Address/ Data
    Pinout compatibility for all densities
SUPPLY VOLTAGE
    1.8V device: VDD = 1.7 to 1.95V
    3.0V device: VDD = 2.7 to 3.6V
PAGE SIZE
    x8 device: (512 + 16 spare) Bytes
    x16 device: (256 + 8 spare) Words
BLOCK SIZE
    x8 device: (16K + 512 spare) Bytes
    x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
    Random access: 12µs (max)
    Sequential access: 50ns (min)
    Page program time: 200µs (typ)
COPY BACK PROGRAM MODE
    Fast page copy without external buffering
FAST BLOCK ERASE
    Block erase time:  2ms (Typ)
STATUS REGISTER
    ELECTRONIC SIGNATURE
CHIP ENABLE 'DON'T CARE' OPTION
    Simple interface with microcontroller
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
    Program/Erase locked during Power transitions
DATA INTEGRITY
    100,000 Program/Erase cycles
    10 years Data Retention
RoHS COMPLIANCE
    Lead-Free Components are Compliant with the RoHS Directive
DEVELOPMENT TOOLS
    Error Correction Code software and hardware models
    Bad Blocks Management and Wear Leveling algorithms
    File System OS Native reference software
    Hardware simulation models

NAND128-A Connection Diagram

NAND128-A  Connection Diagram

NAND128-A datasheet

NAND128-A
PDF/DataSheet Download

  • Datasheet: NAND128-A
  • File Size: 938589 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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