NAND512W3A2DN6E

The NAND512W3A2DN6E is designed as one kind of non-volatile Flash memory device that uses the Single Level Cell (SLC) NAND cell technology and features an open-drain Ready/Busy output that can be used to identify if the Program / Erase / Read (P/E/R) Controller is currently active.

Features of the NAND512W3A2DN6E are:(1)high density nand flash memories: up to 1 Gbit memory array and up to 32 Mbit spare area and cost effective solutions for mass storage applications;(2)NAND interface: x8 or x16 bus width and Multiplexed Address/ Data and Pinout compatibility for all densities;(3)status register;(4)electronic signature;(5)chip enable "don't care" option - simple interface with microcontroller;(6)serial number option;(7)hardware data protection - program/erase locked during power transitions.etc.

The absolute maximum ratings of the NAND512W3A2DN6E can be summarized as:(1)Temperature Under Bias: -50 to 125 °C;(2)Storage Temperature: -65 to 150 °C;(3)Input or Output Voltage (1.8V devices): -0.6 to 2.7 V;(4)Input or Output Voltage (3V devices): -0.6 to 4.6 V;(5)Supply Voltage (1.8V devices): -0.6 to 2.7 V;(6)Supply Voltage (3 V devices): -0.6 to 4.6 V. If you want to know more information such as the electrical characteristics about the NAND512W3A2DN6E, please download the datasheet in www.seekic.com or www.chinaicmart.com.