NAND512W3A2DN6E

IC FLASH 512MBIT 48TSOP

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SeekIC No. : 003558572 Detail

NAND512W3A2DN6E: IC FLASH 512MBIT 48TSOP

floor Price/Ceiling Price

Part Number:
NAND512W3A2DN6E
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Series: - Manufacturer: Micron Technology Inc
Format - Memory: FLASH Available Set Gain : 5.9 dB
Memory Type: FLASH - NAND Memory Size: 512M (64M x 8)
Speed: - Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C
Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP (12x20)    

Description

Series: -
Operating Temperature: -40°C ~ 85°C
Format - Memory: FLASH
Voltage - Supply: 2.7 V ~ 3.6 V
Interface: Parallel
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP (12x20)
Memory Size: 512M (64M x 8)
Manufacturer: Micron Technology Inc
Speed: -
Memory Type: FLASH - NAND


Description

The NAND512W3A2DN6E is designed as one kind of non-volatile Flash memory device that uses the Single Level Cell (SLC) NAND cell technology and features an open-drain Ready/Busy output that can be used to identify if the Program / Erase / Read (P/E/R) Controller is currently active.

Features of the NAND512W3A2DN6E are:(1)high density nand flash memories: up to 1 Gbit memory array and up to 32 Mbit spare area and cost effective solutions for mass storage applications;(2)NAND interface: x8 or x16 bus width and Multiplexed Address/ Data and Pinout compatibility for all densities;(3)status register;(4)electronic signature;(5)chip enable "don't care" option - simple interface with microcontroller;(6)serial number option;(7)hardware data protection - program/erase locked during power transitions.etc.

The absolute maximum ratings of the NAND512W3A2DN6E can be summarized as:(1)Temperature Under Bias: -50 to 125 °C;(2)Storage Temperature: -65 to 150 °C;(3)Input or Output Voltage (1.8V devices): -0.6 to 2.7 V;(4)Input or Output Voltage (3V devices): -0.6 to 4.6 V;(5)Supply Voltage (1.8V devices): -0.6 to 2.7 V;(6)Supply Voltage (3 V devices): -0.6 to 4.6 V. If you want to know more information such as the electrical characteristics about the NAND512W3A2DN6E, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationNAND512W3A2DN6E
VendorNumonyx/ST Micro
CategoryIntegrated Circuits (ICs)
Memory TypeFLASH - Nand
Memory Size512M (64M x 8)
Speed-
InterfaceParallel
Package / Case48-TSOP
PackagingTray
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryFLASH
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NAND512W3A2DN6E
NAND512W3A2DN6E



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