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NCP3712ASNT1

Power Switch ICs - Power Distribution 200mA High Side Sw

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SeekIC No. : 00631079 Detail

NCP3712ASNT1: Power Switch ICs - Power Distribution 200mA High Side Sw

NCP3712ASNT1 Data Sheet

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Part Number:
NCP3712ASNT1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Number of Outputs : 1 Maximum Operating Temperature : + 85 C
Mounting Style : SMD/SMT Package / Case : SC-74-6    

Description

On Resistance (Max) :
On Time (Max) :
Off Time (Max) :
Operating Supply Voltage :
Supply Current (Max) :
Maximum Operating Temperature : + 85 C
Mounting Style : SMD/SMT
Number of Outputs : 1
Package / Case : SC-74-6


Features:

• Capable of Switching Loads of up to 200 mA without External Rboost
• Switch Shuts Off in Response to an Over Voltage Input Transient
• Features Active Turn Off for Fast Input Transient Protection
• Flexible Over Voltage Protection Threshold Set with External Zener
• Automatic Recovery after Transient Decays Below Threshold
• Withstands Input Transients up to 105 V Peak
• Guaranteed Off State with Enbl Input
• ESD Resistant in Accordance with the 2000 V Human Body Model
• Extremely Low Saturation Voltage


Application

• High Voltage Transient Isolation
• Power Switching to Electronic Modules
• DC Power Distribution in Line Operated Equipment
• Buffering Sensitive Circuits from Poorly Regulated Power Supplies
• Preconditioning of Voltage Regulator Input Voltage


Specifications

Rating
Symbol
Value
Unit
InputtoOutput Voltage
Vio
105
V
Reverse InputtoVz. Voltage
Vin(rev)
-9.0
V
Reverse InputtoRboost Voltage
Vin(rev)
-5.0
V
Output Load Current Continuous
Iload
-300
mA
Enbl Input Current Continuous
Ienbl
5.0
mA
Vz Input Current Continuous
Iz
3.0
mA
Rboost Input Current Continuous
Iboost
10
mA
Junction Temperature
TJ
125
°C
Operating Ambient Temperature Range
TA
40 to +85
°C
Storage Temperature Range
Tstg
65 to +150
°C
Device Power Dissipation (Minimum Footprint)
PD
300
mW
Derate Above 25°C
-
2.4
mW/°C
Latchup Performance:
Positive
Negative
ILatchup
200
200
mA
*Maximum Ratings are those values beyond which damage to the device may occur.
1. This device contains ESD protection and exceeds the following tests:Human Body Model 1500 V per MILSTD883, Method 3015.Machine Model Method 150 V.


Parameters:

Technical/Catalog InformationNCP3712ASNT1
VendorON Semiconductor (VA)
CategoryCircuit Protection
Package / Case*
Packaging*
TechnologyMixed Technology
ApplicationsGeneral Purpose
Number of Circuits1 - Single
Voltage - Working-
Voltage - Clamping-
Power (Watts)300mW
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NCP3712ASNT1
NCP3712ASNT1
NCP3712ASNT1OSCT ND
NCP3712ASNT1OSCTND
NCP3712ASNT1OSCT



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