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Part Number: NCR169D

 

MFG: ON

 

D/C: O9+

Description: PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, sma...


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NCR169D General Description


PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in a cost effective plastic TO-226AA package.
• Sensitive Gate Allows Direct Triggering by Microcontrollers and Other Logic Circuits
• OnState Current Rating of 0.8 Amperes RMS at 80°C
• Surge Current Capability 10 Amperes
• Immunity to dV/dt 20 V/msec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Device Marking: NCR169D, Date Code

NCR169D Maximum Ratings

Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1.)
(TJ = -40 to 110°C, Sine Wave, 50 to
60 Hz; Gate Open)
VDRM,
VRRM

400

Volts
On-State RMS Current
(TC = 80°C) 180° Conduction Angles
IT(RMS)
0.8
Amp
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 25°C)
ITSM
10
Amps
Circuit Fusing Consideration (t = 10 ms)
I2t
0.415
A2s
Forward Peak Gate Power
(TA = 25°C, Pulse Width 1.0 ms)
PGM
0.1
Watt
Forward Average Gate Power
(TA = 25°C, t = 20 ms)
PG(AV)
0.10
Watt
Forward Peak Gate Current
(TA = 25°C, Pulse Width 1.0 ms)
IGM
1.0
Amp
Reverse Peak Gate Voltage
(TA = 25°C, Pulse Width 1.0 ms)
VGRM
5.0
Volts
Operating Junction Temperature Range
@ Rate VRRM and VDRM
TJ
40 to 110
Storage Temperature Range
Tstg
40 to 150

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

NCR169D datasheet

NCR169D
PDF/DataSheet Download

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