Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Configuration
: Dual
Transistor Polarity
: N and P-Channel
Package / Case
: SSOT-6
Resistance Drain-Source RDS (on)
: 1 Ohms
Continuous Drain Current
: 0.51 A
Drain-Source Breakdown Voltage
: +/- 60 V
Features: ·N-Channel 0.51A, 50V, RDS(ON) = 2W @ VGS=10V
·P-Channel -0.34A, -50V. RDS(ON)= 5W @ VGS=-10V.
·High density cell design for low RDS(ON).
·Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
·High saturation current.Pinout
Specifications
|
Symbol |
Parameter |
N-Channel |
P-Channel |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage - Continuous |
50
20
0.51
1.5 |
-50
-20
-0.34
-1 |
V
V
A
W
°C |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) |
|
PD |
Maximum Power Dissipation |
(Note 1a)
(Note 1b)
(Note 1c) |
0.96
0.9
0.7
-55 to 150 |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
THERMAL CHARACTERISTICS
RJA
RJC |
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case |
(Note 1a)
(Note 1) |
130
60 |
°C/W
°C/W |
DescriptionThese dual N and P-channel enhancement mode power field effect transistors NDC7001C are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. NDC7001C is particularly suited for low voltage, low current, switching, and power supply applications.
Parameters: | Technical/Catalog Information | NDC7001C |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 510mA, 340mA |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 510mA, 10V |
| Input Capacitance (Ciss) @ Vds | 20pF @ 25V |
| Power - Max | 700mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 1.5nC @ 10V |
| Package / Case | SuperSOT-6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDC7001C
NDC7001C
NDC7001CCT ND
NDC7001CCTND
NDC7001CCT
|
NDC7001C Data Sheet
