Position: Home  > All Categories> Integrated Circuits (ICs) > NDF0610

NDF0610

MOSFET P-CH -60V 10 OHM TO92

product image

NDF0610 Picture
See larger image
SeekIC No. : 004433213 Detail

NDF0610: MOSFET P-CH -60V 10 OHM TO92

NDF0610 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NDF0610
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`-0.18 and -0.12A, -60V. RDS(ON) = 10
`Voltage controlled p-channel small signal switch
`High density cell design for low RDS(ON)
`TO-92 and SOT-23 packages for both through hole and surface mount applications
`High saturation current


Specifications

Symbol
Parameter
NDC632P
Units
VDSS
VDGR
 Drain-Source Voltage
Drain-Gate Voltage (RGS < 1 M)
-60
-60
±20
±30
V
V
V
V
A



W
mW/°C
°C
°C

VGSS

 Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID
 Drain Current Continuous Pulsed
-0.18
-0.12
PD
 Maximum Power Dissipation TA = 25°C
Derate above 25°C
-1
TJ,TSTG Operating and Storage Temperature Range
0.8
5
0.36
2.9
TL Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds
-55 to 150
300
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient 200

350

 °C/W



Description

These P-Channel enhancement mode power field effect transistors NDF0610 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver pulsed currents up to 1A. NDF0610 is particularly suited to low voltage applications requiring a low current high side switch.




Parameters:

Technical/Catalog InformationNDF0610
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C180mA
Rds On (Max) @ Id, Vgs10 Ohm @ 500mA,10V
Input Capacitance (Ciss) @ Vds 60pF @ 25V
Power - Max800mW
PackagingBulk
Gate Charge (Qg) @ Vgs1.43nC @ 10V
Package / CaseTO-92
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NDF0610
NDF0610



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optical Inspection Equipment
AA924
A21K4B
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Test Equipment
TOP853
TOP2005
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Circuit Protection
A50QS75-4Y
F-17*77
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
View more