NDH833N

Resistance Drain-Source RDS (on) :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 7.1 A
Configuration : Single Quint Drain Dual Source
Package / Case : SuperSOT-8


Features:

`7.1 A, 20 V. R<sub>DS(ON)</sub> = 0.020 @ V<sub>GS</sub> = 4.5 V R<sub>DS(ON)</sub> = 0.025 @ V<sub>GS</sub> = 2.7 V.
`Proprietary SuperSOT^TM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low R<sub>DS(ON).</sub>
`Exceptional on-resistance and maximum DC current capability.


Pinout




Specifications

Symbol	Parameter		NDH833N	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 ±8 7.1 24 1.8 1 0.9 -55 to 150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

70

Description

SuperSOT^TM-8 N-Channel enhancement mode power field effect transistors NDH833N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDH833N is particularly suited for low voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.