NDP6030PL

MOSFET P-Ch LL FET Enhancement Mode

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SeekIC No. : 00160412 Detail

NDP6030PL: MOSFET P-Ch LL FET Enhancement Mode

floor Price/Ceiling Price

Part Number:
NDP6030PL
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.025 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 0.025 Ohms
Gate-Source Breakdown Voltage : +/- 16 V


Features:

`-30 A, -30 V. RDS(ON) = 0.042 @ VGS= -4.5 V
                        RDS(ON) = 0.025 @ VGS= -10 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`High density cell design for extremely low RDS(ON).
`175°C maximum junction temperature rating.



Specifications

Symbol
Parameter
NDP6030PL
NDB6030PL
Units
VDSS Drain-Source Voltage
-30
V
VGSS Gate-Source Voltage - Continuous
± 16
V
ID Drain Current - Continuous
- Pulsed
-30
A
-90
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
75
W
0.5
W/
TJ,TSTG Operating and Storage Temperature Range
-65 to 175
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

275

TJ,TSTG Operating and Storage Temperature Range
-65 to 175



Description

These P-Channel logic level enhancement mode power field effect transistors NDP6030PL are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDP6030PL is particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDP6030PL
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs25 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds 1570pF @ 15V
Power - Max75W
PackagingTube
Gate Charge (Qg) @ Vgs36nC @ 5V
Package / CaseTO-220
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDP6030PL
NDP6030PL



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