MFET LOGIC LVL 60V 75A TO220
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| Symbol | Parameter |
NDP7060L |
NDB7060L |
Units |
| VDSS | Drain-Source Voltage |
60 |
V | |
| VDGR | Drain-Gate Voltage (RGS 1 M) |
60 |
V | |
| VGSS | Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) |
± 20 |
V | |
|
± 40 | ||||
| ID | Drain Current - Continuous - Pulsed |
75 |
A | |
|
225 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
150 |
W | |
|
1 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
These logic level N-Channel enhancement mode power field effect transistors NDP7060L are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP7060L is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| Technical/Catalog Information | NDP7060L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 37.5A, 5V |
| Input Capacitance (Ciss) @ Vds | 4000pF @ 25V |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 115nC @ 5V |
| Package / Case | TO-220 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NDP7060L NDP7060L |