NDS0605

MOSFET P-Channel FET Enhancement Mode

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SeekIC No. : 00147513 Detail

NDS0605: MOSFET P-Channel FET Enhancement Mode

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US $ .1~.29 / Piece | Get Latest Price
Part Number:
NDS0605
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.18 A
Resistance Drain-Source RDS (on) : 5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 5 Ohms
Continuous Drain Current : 0.18 A


Features:

`-0.18A, -60V. RDS(ON) = 5 @ VGS = -10V.
`Voltage controlled p-channel small signal switch.
`High density cell design for low RDS(ON) .
`High saturation current.



Specifications

Symbol
Parameter
NDS0605
Units
VDSS
VDGR
Drain-Source Voltage
Drain-Gate Voltage (RGS1 M)
-60
-60
±20
-0.18
-1
0.36
2.9
-55 to 150
300
V
V
V
A

W
mW/°C
°C
°C

VGSS

Gate-Source Voltage - Continuous
ID
Drain Current - Continuous
- Pulsed
PD
Maximum Power Dissipation TA = 25°C
Derate above 25°C
TJ,TSTG Operating and Storage Temperature Range

TL

Maximum lead temperature for soldering purposes,
1/16" from case for 10 seconds
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a)
(Note 1)

350

°C/W



Description

These P-Channel enhancement mode power field effect transistors NDS0605 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. NDS0605 is particularly suited to low voltage applications requiring a low current high side switch.




Parameters:

Technical/Catalog InformationNDS0605
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C180mA
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 79pF @ 25V
Power - Max360mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs2.5nC @ 10V
Package / CaseSOT-23
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS0605
NDS0605
NDS0605DKR ND
NDS0605DKRND
NDS0605DKR



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