NDS8961

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.072 Ohms
Continuous Drain Current : 3.1 A


Features:

`3.1 A, 30 V. R<sub>DS(ON)</sub> = 0.1  @ V<sub>GS</sub> = 10 V R<sub>DS(ON)</sub> = 0.15  @ V<sub>GS</sub> = 4.5 V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used
`surface mount package.
`Dual MOSFET in surface mount package.


Pinout




Specifications

Symbol	Parameter		NDS8961	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 3.1 10 2 1.6 1 0.9 -55 to 150	V V A W °C
ID	Drain Current - Continuous - Pulsed	(Note 1a)
PD	Power Dissipation for Dual Operation
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 40

°C/W °C/W

Description

SO-8 N-Channel enhancement mode power field effect transistors NDS8961 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.NDS8961 is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDS8961
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3.1A
Rds On (Max) @ Id, Vgs	100 mOhm @ 3.1A, 10V
Input Capacitance (Ciss) @ Vds	190pF @ 15V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDS8961 NDS8961