MOSFET Single P-Ch MOSFET Power Trench
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 60 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | - 3 A | ||
| Resistance Drain-Source RDS (on) : | 78 m Ohms | Configuration : | Single Quad Drain Triple Source | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 Narrow | Packaging : | Reel |