Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Configuration
: Dual Dual Drain
Package / Case
: SOIC-8 Narrow
Resistance Drain-Source RDS (on)
: 0.06 Ohms
Continuous Drain Current
: +/- 3.7 A
Features: `3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10V
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual MOSFET in surface mount package.Pinout
Specifications
| Symbol |
Parameter |
NDS9956A |
Units |
| VDSS |
Drain-Source Voltage |
30 |
V |
| VGSS |
Gate-Source Voltage |
± 20 |
V |
| ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
± 3.7 |
A |
| ± 15 |
| PD |
Power Dissipation for Dual Operation |
2 |
W |
|
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c) |
1.6 |
| 1 |
| 0.9 |
| TJ,TSTG |
Operating and Storage Temperature Range |
-55 to 150 |
|
| THERMAL CHARACTERISTICS |
| RJA |
Thermal Resistance, Junction-to-Ambient (Note 1a) |
78 |
/W |
| RJC |
Thermal Resistance, Junction-to-Case (Note 1) |
40 |
/W |
DescriptionThese N-Channel enhancement mode power field effect transistors NDS9956A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS9956A is particularly suited for low voltage applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed.
Parameters: | Technical/Catalog Information | NDS9956A |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.7A |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 2.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 320pF @ 10V |
| Power - Max | 900mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS9956A
NDS9956A
NDS9956ACT ND
NDS9956ACTND
NDS9956ACT
|
NDS9956A Data Sheet
