Transistors RF GaAs Dual Gate MESFET
NE25118-T1-U73: Transistors RF GaAs Dual Gate MESFET
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| Technology Type : | MESFET | Frequency : | 0.9 GHz | ||
| Gain : | 20 dB | Noise Figure : | 1.1 dB | ||
| Forward Transconductance gFS (Max / Min) : | 25 mS | Drain Source Voltage VDS : | 13 V | ||
| Gate-Source Breakdown Voltage : | - 4.5 V | Continuous Drain Current : | 20 mA | ||
| Maximum Operating Temperature : | + 125 C | Power Dissipation : | 120 mW | ||
| Mounting Style : | SMD/SMT | Package / Case : | SOT-343 |