NE334S01

Mounting Style : SMD/SMT
Technology Type : HEMT
Power Dissipation : 300 mW
Gate-Source Breakdown Voltage : - 3 V
Drain Source Voltage VDS : 4 V
Maximum Operating Temperature : + 125 C
Frequency : 4 GHz
Gain : 16 dB
Package / Case : SO-1
Noise Figure : 0.25 dB
Forward Transconductance gFS (Max / Min) : 85 mS
Continuous Drain Current : 150 mA


Features:

• Super Low Noise Figure & High Associated Gain
  NF = 0.25 dB TYP, Ga = 16.0 dB TYP. at f = 4 GHz
• Gate Width: Wg = 280 m


Specifications

Drain to Source Voltage	VDS	4.0	V
Gate to Source Voltage	VGS	3.0	V
Drain Current	ID	IDSS	mA
Total Power Dissipation	Ptot	300	mW
Channel Temperature	Tch	125
Storage Temperature	Tstg	65 to +125

Description

The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems.