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NE3503M04-T2-A

Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET

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SeekIC No. : 00219195 Detail

NE3503M04-T2-A: Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET

NE3503M04-T2-A Data Sheet

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Part Number:
NE3503M04-T2-A
Mfg:
CEL
Supply Ability:
5000

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  • 0~3000
  • Unit Price
  • $.5
  • Processing time
  • 15 Days
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Product Details

Quick Details

Technology Type : HEMT Frequency : 12 GHz
Gain : 12 dB Noise Figure : 0.45 dB
Forward Transconductance gFS (Max / Min) : 55 mS Drain Source Voltage VDS : 4 V
Gate-Source Breakdown Voltage : - 3 V Continuous Drain Current : 70 mA
Maximum Operating Temperature : + 125 C Power Dissipation : 125 mW
Mounting Style : SMD/SMT Package / Case : FTSMM-4 (M04)    

Description

Continuous Drain Current : 70 mA
Mounting Style : SMD/SMT
Technology Type : HEMT
Gain : 12 dB
Frequency : 12 GHz
Forward Transconductance gFS (Max / Min) : 55 mS
Gate-Source Breakdown Voltage : - 3 V
Drain Source Voltage VDS : 4 V
Maximum Operating Temperature : + 125 C
Package / Case : FTSMM-4 (M04)
Noise Figure : 0.45 dB
Power Dissipation : 125 mW


Parameters:

Technical/Catalog InformationNE3503M04-T2-A
VendorNEC
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel JFET
Voltage - Rated 38V
Current Rating70mA
Package / CaseSC-70-4, SC-82AB, SOT-323-4, SOT-343
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE3503M04 T2 A
NE3503M04T2A



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