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NE4210M01

Features: `Super Low Noise Figure & High Associated Gain NF = 0.8 dB TYP, Ga = 11 dB TYP. at f = 12 GHz`6pin super minimold package`Gate Width: Wg = 200mSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS - 3.0 V...

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SeekIC No. : 004433337 Detail

NE4210M01: Features: `Super Low Noise Figure & High Associated Gain NF = 0.8 dB TYP, Ga = 11 dB TYP. at f = 12 GHz`6pin super minimold package`Gate Width: Wg = 200mSpecifications Parameter Symbol ...

NE4210M01 Data Sheet

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Part Number:
NE4210M01
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

`Super Low Noise Figure & High Associated Gain
  NF = 0.8 dB TYP, Ga  = 11 dB TYP. at f = 12 GHz
`6pin super minimold package
`Gate Width:  Wg = 200m



Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage VDS
4.0 V
Gate to Source Voltage VGS
- 3.0 V
Drain Current ID
IDSS
mA
Gate Current IG
100 A
Total Power Dissipation Ptot
125 mW
Channel Temperature Tch
125
Storage Temperature Tstg
- 65 to +125



Description

The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.




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