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Part Number: NE434S01

 

 

 

 

Description: The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electr...


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NE434S01 General Description


The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems.

NE434S01 Maximum Ratings

Drain to Source Voltage VDS
 4.0 V
Gate to Source Voltage VGS
 -3.0 V
Drain Current ID
 IDSS
 mA
Total Power Temperature Ptot
 300 mA
Channel Temperature Tch
 125
Storage Temperature Tstg
 -65 to +12

NE434S01 Features

`Super Low Noise Figure & High Associated Gain
  NF = 0.35 dB TYP, Ga = 15.5 dB TYP. at f = 4 GHz
`Gate Width: Wg = 280 m

NE434S01 datasheet

NE434S01
PDF/DataSheet Download

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