NE52118

Features: · For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W)· 4-pin super minimold package· Grounded Emitter TransistorSpecificatio...

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SeekIC No. : 004433357 Detail

NE52118: Features: · For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 ...

floor Price/Ceiling Price

Part Number:
NE52118
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

· For Low Noise & High Gain amplifiers
  NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W)
  OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W)
· 4-pin super minimold package
· Grounded Emitter Transistor



Specifications

Parameter
Symbol
Ratings
Unit
Collector to Emitter Voltage
VCEO
5.0
V
Collector to Base Voltage
VCBO
3.0
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
7
mA
Base Current
IB
0.3
mA
Total Power Dissipation
Ptot
30
mW
Junction Temperature
Tj
+125
°C
Storage Temperature
Tstg
65 to +125
°C



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