Transistors RF GaAs NPN L-S Lo Noise Amp
NE52418-A: Transistors RF GaAs NPN L-S Lo Noise Amp
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Technology Type : | HBT | Frequency : | 2 GHz |
Gain : | 16 dB | Noise Figure : | 1 dB |
Drain Source Voltage VDS : | 5 V | Gate-Source Breakdown Voltage : | 3 V |
Continuous Drain Current : | 40 mA | Maximum Operating Temperature : | + 125 C |
Power Dissipation : | 150 mW | Mounting Style : | SMD/SMT |
Package / Case : | Outline18 |
Technical/Catalog Information | NE52418-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | 1dB ~ 1.5dB @ 2GHz |
Current - Collector (Ic) (Max) | 40mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 3mA, 2V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5V |
Gain | 14dB ~ 16dB |
Power - Max | 150mW |
Compression Point (P1dB) | - |
Package / Case | S-Mini 4P |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE52418 A NE52418A |