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NE5510179A

Features: • HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm• HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm• HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm• SINGL...

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NE5510179A: Features: • HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm• HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm• HI...

NE5510179A Data Sheet

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Part Number:
NE5510179A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm
• HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm
• HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm
• SINGLE SUPPLY: 2.8 to 6.0 V
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX


Application

• DIGITAL CELLULAR PHONES: .5 V GSM 1800/GSM 1900 Class 1 Handsets
• OTHERS: .6 - 2.0 GHz TDMA Applications


Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain Supply Voltage V 8.5
VGS Gate Supply Voltage V 6
ID Drain Current (continuous)   A0.5
ID Drain Current (Pulse Test)2 A 1.0
PIN Input Power3 dBm 27
PT Total Power Dissipation W 1.6
TCH Channel Temperature °C 125
TSTG Storage Temperature °C -55 to +125
Note:
1. Operation in excess of any one of these parameters may result n permanent damage.
2. Duty Cycle 50%, Ton = 1ms.
3. Freq = 1.9 GHz, VDS = 3.5 V.


Description

The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.5V GSM1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate ateral MOSFET) and housed in a surface mount package. NE5510179A can deliver 29.5 dBm output power with 50% power dded efficiency at 1.9 GHz under the 3.5 V supply voltage, r can deliver 29 dBm output power at 2.8 V by varying the ate voltage as a power control function.




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