Position: Home  > All Categories> Integrated Circuits (ICs) > NE5510279A

NE5510279A

Features: • HIGH OUTPUT POWER:32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm• HIGH POWER ADDED EFFICIENCY:45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm• HIGH LINEAR GAIN:10 dB TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 10 dBm•...

product image

NE5510279A Picture
See larger image
SeekIC No. : 004433375 Detail

NE5510279A: Features: • HIGH OUTPUT POWER:32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm• HIGH POWER ADDED EFFICIENCY:45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 ...

NE5510279A Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NE5510279A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• HIGH OUTPUT POWER:
32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm
• HIGH POWER ADDED EFFICIENCY:
45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm
• HIGH LINEAR GAIN:
10 dB TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 10 dBm
• SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY: 2.8 to 6.0 V


Application

• DIGITAL CELLULAR PHONES
• OTHERS


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain Supply Voltage
V
8.5
VGS
Gate Supply Voltage
V
6
ID
Drain Current (continuous)
A
1.0
ID
Drain Current (Pulse Test)2
A
2.0
PIN
Input Power3
dBm
30
PT
Total Power Dissipation
W
2.4
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-55 to +125
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Duty Cycle 50%, ton = 1 ms.
3. Frequency = 1.8 GHz, VDS = 3.5 V.


Description

The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package. NE5510279A can deliver 32 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.5 V supply voltage, or can deliver 31 dBm output power at 2.8 V by varying the gate voltage as a power control function.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Audio Products
HUC1002
WM-64CT
RF and RFID
X3C26P1-30S
1P620S
Discrete Semiconductor Products
T508N12TOF
MUR20040
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
LED Products
LM24P20
KCG057QV1DB-G770
View more