Transistors RF MOSFET Power UHF Band RF Power
NE5511279A-A: Transistors RF MOSFET Power UHF Band RF Power
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 G...
| Configuration : | Single | Transistor Polarity : | N-Channel | ||
| Frequency : | 900 MHz | Gain : | 15 dB | ||
| Output Power : | 40 dBm | Drain-Source Breakdown Voltage : | 20 V | ||
| Continuous Drain Current : | 3 A | Gate-Source Breakdown Voltage : | 6 V | ||
| Maximum Operating Temperature : | + 125 C | Package / Case : | 79A |
| Technical/Catalog Information | NE5511279A-A |
| Vendor | NEC |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 7.5V |
| Current Rating | 2.5A |
| Package / Case | 79A |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NE5511279A A NE5511279AA |