Transistors RF MOSFET Power L/S Band Med Power
NE5520279A-A: Transistors RF MOSFET Power L/S Band Med Power
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Features: • High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 G...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 15 V |
| Continuous Drain Current : | 0.6 A | Gate-Source Breakdown Voltage : | 5 V |
| Package / Case : | 79A |
| Technical/Catalog Information | NE5520279A-A |
| Vendor | NEC Electronics |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | 79A |
| FET Type | N-Channel |
| Typical RF Application | DCS |
| Typical RF Application | Wireless LAN |
| Drain to Source Voltage (Vdss) | 3.2 V [Nom] |
| Continuous Drain Current (Id) | 700.00 mA [Nom] |
| Power Dissipation | 12.500 W [Max] |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NE5520279A A NE5520279AA |