Transistors RF MOSFET Power L/S Band Med Power
NE5520279A-T1-A: Transistors RF MOSFET Power L/S Band Med Power
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Features: • High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 G...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 15 V | ||
| Continuous Drain Current : | 0.6 A | Gate-Source Breakdown Voltage : | 5 V | ||
| Package / Case : | 79A | Packaging : | Reel |
| Technical/Catalog Information | NE5520279A-T1-A |
| Vendor | NEC |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 3.2V |
| Current Rating | 800mA |
| Package / Case | 79A |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NE5520279A T1 A NE5520279AT1A |