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NE5520279A

Transistors RF MOSFET Power L/S Band Med Power

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SeekIC No. : 00220832 Detail

NE5520279A: Transistors RF MOSFET Power L/S Band Med Power

NE5520279A Data Sheet

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Part Number:
NE5520279A
Mfg:
NEC/CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/6

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 15 V
Continuous Drain Current : 0.6 A Gate-Source Breakdown Voltage : 5 V
Package / Case : 79A    

Description

Frequency :
Gain :
Output Power :
Configuration :
Maximum Operating Temperature :
Packaging :
Transistor Polarity : N-Channel
Package / Case : 79A
Drain-Source Breakdown Voltage : 15 V
Gate-Source Breakdown Voltage : 5 V
Continuous Drain Current : 0.6 A


Features:

• LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
• HIGH OUTPUT POWER: +32 dBm TYP
• HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz
• HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz
• SINGLE SUPPLY: 2.8 to 6.0 V


Application

• DIGITAL CELLULAR PHONES: .2 V DCS1800 Handsets
• 0.7-2.5 GHz FIXED WIRELESS ACCESS
• W-LAN
• SHORT RANGE WIRELESS
• RETAIL BUSI NESS RADIO
• SPECIAL MOBILE RADIO


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain Supply Voltage
V
15.0
VGS
Gate Supply Voltage
V
5.0
ID
Drain Current (continuous)
A
0.6
ID
Drain Current (Pulse Test)2
A
1.2
PT
Total Power Dissipation
W
12.5
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-55 to +125
Note:
1. Operation in excess of any one of these parameters may result n permanent damage.
2. Duty Cycle 50%, Ton = 1 s.


Description

NEC's NE5520279A is an N-Channel silicon power laterally if fused MOSFET spe cial ly designed as the power ampliÞ erfor mobile and Þ xed wireless applications. Die are man u - ac tured us ing NEC's NEWMOS tech nol o gy (NEC's 0.6 µmWSi gate lat er al MOSFET) and housed in a surface mount ack age.




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