Transistors RF GaAs L&S Band Med Power
NE552R479A-T1-A: Transistors RF GaAs L&S Band Med Power
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Features: • High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 G...
Frequency : | 2.45 GHz | Gain : | 11 dB |
Forward Transconductance gFS (Max / Min) : | 0.4 S | Gate-Source Breakdown Voltage : | 2 V |
Continuous Drain Current : | 230 mA | Maximum Operating Temperature : | + 125 C |
Power Dissipation : | 3 W | Mounting Style : | SMD/SMT |
Package / Case : | 79A |
Technical/Catalog Information | NE552R479A-T1-A |
Vendor | NEC Electronics |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | 79A |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 15.0 V [Nom] |
Voltage Gate to Source (Vgs) | 5.0 V [Max] |
Continuous Drain Current (Id) | 300.00 mA [Nom] |
Power Dissipation | 10.000 W [Max] |
Packaging | Tape & Reel, 7" |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE552R479A T1 A NE552R479AT1A |