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NE552R479A-T1-A

Transistors RF GaAs L&S Band Med Power

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SeekIC No. : 00219186 Detail

NE552R479A-T1-A: Transistors RF GaAs L&S Band Med Power

NE552R479A-T1-A Data Sheet

floor Price/Ceiling Price

US $ 2.13~2.13 / Piece | Get Latest Price
Part Number:
NE552R479A-T1-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~1000
  • Unit Price
  • $2.13
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2026/1/16

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Product Details

Quick Details

Frequency : 2.45 GHz Gain : 11 dB
Forward Transconductance gFS (Max / Min) : 0.4 S Gate-Source Breakdown Voltage : 2 V
Continuous Drain Current : 230 mA Maximum Operating Temperature : + 125 C
Power Dissipation : 3 W Mounting Style : SMD/SMT
Package / Case : 79A    

Description

Technology Type :
Noise Figure :
Drain Source Voltage VDS :
Mounting Style : SMD/SMT
Gain : 11 dB
Maximum Operating Temperature : + 125 C
Package / Case : 79A
Power Dissipation : 3 W
Frequency : 2.45 GHz
Forward Transconductance gFS (Max / Min) : 0.4 S
Gate-Source Breakdown Voltage : 2 V
Continuous Drain Current : 230 mA


Parameters:

Technical/Catalog InformationNE552R479A-T1-A
VendorNEC Electronics
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package Name79A
FET TypeN-Channel
Drain to Source Voltage (Vdss)15.0 V [Nom]
Voltage Gate to Source (Vgs)5.0 V [Max]
Continuous Drain Current (Id)300.00 mA [Nom]
Power Dissipation10.000 W [Max]
PackagingTape & Reel, 7"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE552R479A T1 A
NE552R479AT1A



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