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NE552R479A

Transistors RF MOSFET Power

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SeekIC No. : 00220869 Detail

NE552R479A: Transistors RF MOSFET Power

NE552R479A Data Sheet

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Part Number:
NE552R479A
Mfg:
CEL
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 2.45 GHz Gain : 11 dB
Output Power : 26 dBm Drain-Source Breakdown Voltage : 18 V
Continuous Drain Current : 230 mA Gate-Source Breakdown Voltage : 2 V
Maximum Operating Temperature : + 125 C Package / Case : 79A    

Description

Packaging :
Configuration : Single
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 18 V
Maximum Operating Temperature : + 125 C
Frequency : 2.45 GHz
Gain : 11 dB
Output Power : 26 dBm
Continuous Drain Current : 230 mA
Gate-Source Breakdown Voltage : 2 V
Package / Case : 79A


Features:

• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V
• HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz
• SINGLE SUPPLY: 2.8 to 6 V
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX


Application

• DIGITAL CELLULAR PHONES: 3.0 V GSM1900 Pre Driver
• ANALOG CELLULAR PHONES: 2.4 V AMPS Handsets
• OTHERS: W-LAN Short Range Wireless Retail Business Radio Special Mobile Radio


Specifications

SYMBOLS
 PARAMETERS
UNITS
RATINGS
VDS
 Drain Supply Voltage
V
15.0
VGS
 Gate Supply Voltage
V
5.0
IDS
 Drain Current
mA
300
IDS
 Drain Current (Pulse Test)2
mA
600
PT
 Total Power Dissipation
W
10
TCH
 Channel Temperature
°C
125
TSTG
 Storage Temperature
°C
-55 to +125
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Duty cycle 50%, Ton 1 s.


Description

NEC's NE552R479A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for mobile and fixed wireless applications. Die are manufactured using NEC's NEWMOS2 technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package.




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