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Description: NEC's NE552R479A is an N-Channel silicon power laterally diffused MOSFET specially designed as the tra...


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NE552R479A General Description


NEC's NE552R479A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for mobile and fixed wireless applications. Die are manufactured using NEC's NEWMOS2 technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package.

NE552R479A Maximum Ratings

SYMBOLS
 PARAMETERS
UNITS
RATINGS
VDS
 Drain Supply Voltage
V
15.0
VGS
 Gate Supply Voltage
V
5.0
IDS
 Drain Current
mA
300
IDS
 Drain Current (Pulse Test)2
mA
600
PT
 Total Power Dissipation
W
10
TCH
 Channel Temperature
°C
125
TSTG
 Storage Temperature
°C
-55 to +125
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Duty cycle 50%, Ton 1 s.

NE552R479A Features

• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V
• HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz
• SINGLE SUPPLY: 2.8 to 6 V
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX

NE552R479A Typical Application

• DIGITAL CELLULAR PHONES: 3.0 V GSM1900 Pre Driver
• ANALOG CELLULAR PHONES: 2.4 V AMPS Handsets
• OTHERS: W-LAN Short Range Wireless Retail Business Radio Special Mobile Radio

NE552R479A datasheet

NE552R479A
PDF/DataSheet Download

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