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NE55410GR-AZ

Transistors RF MOSFET Power N-Ch Power LDMOS FET

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SeekIC No. : 00219641 Detail

NE55410GR-AZ: Transistors RF MOSFET Power N-Ch Power LDMOS FET

NE55410GR-AZ Data Sheet

floor Price/Ceiling Price

US $ 19.08~25.76 / Piece | Get Latest Price
Part Number:
NE55410GR-AZ
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • Unit Price
  • $25.76
  • $21.46
  • $19.08
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : N-Channel
Frequency : 0.1 GHz to 2.6 GHz Gain : 13.5 db at 2.14 GHz
Output Power : 10 W Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 1 A Gate-Source Breakdown Voltage : +/- 7 V
Maximum Operating Temperature : + 150 C Package / Case : HTSSOP-16    

Description

Packaging :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 1 A
Output Power : 10 W
Frequency : 0.1 GHz to 2.6 GHz
Gain : 13.5 db at 2.14 GHz
Gate-Source Breakdown Voltage : +/- 7 V
Package / Case : HTSSOP-16


Parameters:

Technical/Catalog InformationNE55410GR-AZ
VendorNEC Electronics
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package Name16-HTSSOP
FET TypeN-Channel
Drain to Source Voltage (Vdss)65.0 V [Nom]
Voltage Gate to Source (Vgs)7.0 V [Max]
Continuous Drain Current (Id)250.00 mA [Nom]
Power Dissipation40.000 W [Max]
PackagingTape & Reel, 7"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE55410GR AZ
NE55410GRAZ



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