Transistors RF MOSFET Power N-Ch Power LDMOS FET
NE55410GR-AZ: Transistors RF MOSFET Power N-Ch Power LDMOS FET
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 G...
Configuration : | Dual | Transistor Polarity : | N-Channel | ||
Frequency : | 0.1 GHz to 2.6 GHz | Gain : | 13.5 db at 2.14 GHz | ||
Output Power : | 10 W | Drain-Source Breakdown Voltage : | 65 V | ||
Continuous Drain Current : | 1 A | Gate-Source Breakdown Voltage : | +/- 7 V | ||
Maximum Operating Temperature : | + 150 C | Package / Case : | HTSSOP-16 |
Technical/Catalog Information | NE55410GR-AZ |
Vendor | NEC Electronics |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | 16-HTSSOP |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 65.0 V [Nom] |
Voltage Gate to Source (Vgs) | 7.0 V [Max] |
Continuous Drain Current (Id) | 250.00 mA [Nom] |
Power Dissipation | 40.000 W [Max] |
Packaging | Tape & Reel, 7" |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE55410GR AZ NE55410GRAZ |