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NE55410GR-T3-AZ

Transistors RF MOSFET Power Silicon Medium Pwr LDMOSFET

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SeekIC No. : 00220274 Detail

NE55410GR-T3-AZ: Transistors RF MOSFET Power Silicon Medium Pwr LDMOSFET

NE55410GR-T3-AZ Data Sheet

floor Price/Ceiling Price

US $ 10.91~10.91 / Piece | Get Latest Price
Part Number:
NE55410GR-T3-AZ
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~1000
  • Unit Price
  • $10.91
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/15

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : N-Channel
Frequency : 0.1 GHz to 2.6 GHz Gain : 13.5 db at 2.14 GHz
Output Power : 10 W Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 1 A Gate-Source Breakdown Voltage : +/- 7 V
Maximum Operating Temperature : + 150 C Package / Case : HTSSOP-16
Packaging : Reel    

Description

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 1 A
Output Power : 10 W
Frequency : 0.1 GHz to 2.6 GHz
Gain : 13.5 db at 2.14 GHz
Gate-Source Breakdown Voltage : +/- 7 V
Package / Case : HTSSOP-16


Parameters:

Technical/Catalog InformationNE55410GR-T3-AZ
VendorNEC
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating250mA
Package / Case79A
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE55410GR T3 AZ
NE55410GRT3AZ



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