NE68019-T1

TRANS NPN 2GHZ SMD

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SeekIC No. : 003435073 Detail

NE68019-T1: TRANS NPN 2GHZ SMD

floor Price/Ceiling Price

Part Number:
NE68019-T1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Series: - Manufacturer: CEL
Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V
Typical Resistor Ratio : 1 at NPN, 4.7 at PNP Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 1.9dB @ 1GHz ~ 2GHz Gain: 9.6dB ~ 13.5dB
Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416 Supplier Device Package: 3-SuperMiniMold    

Description

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 35mA
Manufacturer: CEL
Power - Max: 100mW
Package / Case: SC-75, SOT-416
Supplier Device Package: 3-SuperMiniMold
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Packaging: Cut Tape (CT)
Noise Figure (dB Typ @ f): 1.7dB ~ 1.9dB @ 1GHz ~ 2GHz
Gain: 9.6dB ~ 13.5dB


Parameters:

Technical/Catalog InformationNE68019-T1
VendorNEC
CategoryDiscrete Semiconductor Products
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)1.7dB ~ 1.9dB @ 1GHz ~ 2GHz
Current - Collector (Ic) (Max)35mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 6V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Gain13.5dB ~ 9.6dB
Power - Max150mW
Compression Point (P1dB)-
Package / CaseSurface Mount
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NE68019 T1
NE68019T1
NE68019TR ND
NE68019TRND
NE68019TR



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