NE722S01-T1B1

The NE722S01-T1B1 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band.The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance and uniformity. This NE722S01-T1B1's low phase noise and high fT makes it a excellent choice for oscillator applications on a digital LNB (Low Noise Block). The NE722S01 is housed in a low cost plastic package which is available in Tape and Reel.

Features of the NE722S01-T1B1 are:(1)HIGH POWER GAIN:GS = 6 dB TYP at f = 12 GHz; (2)OUTPUT POWER (at 1 dB compression):15 dB TYP at f = 12 GHz; (3)LOW NOISE/HIGH GAIN:NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz; (4)GATE LENGTH: LG = 0.8 m (recessed gate); (5)GATE WIDTH: WG = 400 m.

The absolute maximum ratings of the NE722S01-T1B1 can be summarized as:(1)VDS Drain to Source Voltage : 5.0V; (2)VGS Gate to Source Voltage : -5.0V; (3)VGD Gate to Drain Voltage : -6.0V; (4)IDS Drain Current : IDSSmW; (5)PT Total Power Dissipation : 250mW; (6)PIN Input Power : 40mW; (7)TCH Channel  Temperature : 125°C; (8)TSTG Storage Temperature : -65 to +125°C.

If you want to know more information about NE722S01-T1B1 such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .